Title :
High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors
Author :
Makimoto, T. ; Kumakura, K. ; Kobayashi, N.
Author_Institution :
NTT Basic Res. Lab., NTT Corp., Kanagawa, Japan
Abstract :
In this paper, we report on the significantly improved common-emitter I-V characteristics of GaN/InGaN DHBT with this regrown p-InGaN base layer.
Keywords :
MOCVD coatings; gallium compounds; heterojunction bipolar transistors; indium compounds; ohmic contacts; semiconductor heterojunctions; semiconductor thin films; wide band gap semiconductors; DHBT; GaN/InGaN double heterojunction bipolar transistors; I-V properties; high current gain; p-InGaN base layer; reduced common-emitter offset voltage; Aluminum gallium nitride; Diodes; Double heterojunction bipolar transistors; Epitaxial growth; Epitaxial layers; Gallium nitride; Heterojunction bipolar transistors; Laboratories; Low voltage; Temperature;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226854
