Title :
The wideband light emission around 800 nm from ternary InAsP quantum dots with an intentionally broadened size and composition distribution
Author :
Miyake, S. ; Lee, W.S. ; Ujihara, T. ; Takeda, Y.
Author_Institution :
Dept. of Crystalline Mater. Sci., Nagoya Univ.
Abstract :
Emission wavelength from a confinement quantum dot (QD) strongly depends on its size and composition. As the application of the wideband light source for optical coherence tomography (OCT), we fabricated InP and InAsP quantum dots on GaInP lattice-matched to GaAs(001) with an intentionally broadened size and composition distribution. The growth technique is droplet hetero-epitaxy using organometallic vapor phase epitaxy system. In particular, InAsP QDs showed a broad PL spectrum with the central wavelength at 845 nm and a large FWHM of 100 nm. This FWHM value improves the resolution of OCT by 4-5 times from the conventional one
Keywords :
III-V semiconductors; MOCVD; chemical analysis; indium compounds; infrared sources; optical tomography; photoluminescence; semiconductor quantum dots; spectral line breadth; vapour phase epitaxial growth; 845 nm; FWHM; GaAs(001); GaInP-GaAs; InAsP-GaInP-GaAs; InP quantum dots; InP-GaInP-GaAs; OCT; central wavelength; composition distribution; confinement quantum dot; droplet hetero-epitaxy; intentionally broadened quantum dot size; lattice matching; optical coherence tomography; organometallic vapor phase epitaxy system; photoluminescence; resolution; ternary InAsP quantum dots; wideband light emission; wideband light source; Biomedical optical imaging; Coherence; Indium phosphide; Light sources; Optical interferometry; Quantum dots; Temperature; Tomography; US Department of Transportation; Wideband;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634150
