DocumentCode :
1979916
Title :
A CMOS IQ Digital Doherty Transmitter using modulated tuning capacitors
Author :
Gaber, Wagdy M. ; Wambacq, Piet ; Craninckx, Jan ; Ingels, Mark
Author_Institution :
Imec, Leuven, Belgium
fYear :
2012
fDate :
17-21 Sept. 2012
Firstpage :
341
Lastpage :
344
Abstract :
This paper presents a new approach to increase the output power and to enhance the drain efficiency of Direct Digital RF Modulators (DDRM). Two differential four-phase DDRMs are organized in a Doherty-like configuration using two different transformers. The modulated tuning capacitors concept is proposed to achieve a high efficiency at maximum output power and at back-off. To demonstrate this principle, a 2 GHz IQ Digital Doherty Transmitter with on-chip transformers has been integrated in 90 nm CMOS Technology. The digital IQ transmitter achieves a maximum output power of 24.8 dBm with 26% drain efficiency and 26% drain efficiency at 6 dB back-off. With a 10 MHz RFBW multi-tone OFDM signal, the transmitter consumes 176 mA from a 2.4 V supply. It achieves 18.8 dBm RMS output power with 18% average drain efficiency.
Keywords :
CMOS integrated circuits; OFDM modulation; capacitors; radio transmitters; transformers; CMOS IQ digital Doherty transmitter; CMOS technology; Doherty-like configuration; RFBW multitone OFDM signal; RMS output power; current 176 mA; differential four-phase DDRM; digital IQ transmitter; direct digital RF modulators; drain efficiency; efficiency 18 percent; frequency 2 GHz; modulated tuning capacitors; onchip transformers; size 90 nm; voltage 2.4 V; CMOS integrated circuits; Capacitors; Impedance; Power amplifiers; Power generation; Transmitters; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC (ESSCIRC), 2012 Proceedings of the
Conference_Location :
Bordeaux
ISSN :
1930-8833
Print_ISBN :
978-1-4673-2212-6
Electronic_ISBN :
1930-8833
Type :
conf
DOI :
10.1109/ESSCIRC.2012.6341324
Filename :
6341324
Link To Document :
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