Title :
Fabrication and characterization of high current gain ((β=430) and high power (23 A-500 V) 4H-SiC darlington bipolar transistors
Author :
Luo, Yanbin ; Zhang, Jianhui ; Alexandrov, Petre ; Fursin, Leonid ; Zhao, Jian H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
In this paper, we reports a hybrid Darlington with not only a substantially increased current gain of 430 but also a substantially increase power rating of 23A-500V.
Keywords :
bipolar transistors; silicon compounds; 23 A; 4H-SiC darlington bipolar transistors; 500 V; SiC; current gain; hybrid Darlington; Bipolar transistors; Fabrication;
Conference_Titel :
Device Research Conference, 2003
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226855
