Title :
/spl lambda/ = 1.3 /spl mu/m high density InGaAs/GaAs quantum dots grown by molecular beam epitaxy
Author :
Feng, David J. ; Tzeng, T.E. ; Chen, C.Y. ; Lay, T.S. ; Chang, T.Y.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
InxGa1-xAs (x=0.5-0.75) QD´s of high density of 1.3 times 1011 cm-2 and uniform size (diameter ~ 23-nm and height ~ 4-nm) were obtained by MBE. lambda = 1.3 mum emission was observed for In0.65Ga0.35As QD´s capped with In0.1Ga0.9As
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; 1.3 mum; InGaAs-GaAs; MBE; capping; emission; high density InGaAs/GaAs quantum dots; molecular beam epitaxy; uniform quantum dot size; Annealing; Atomic force microscopy; Atomic measurements; Capacitive sensors; Force measurement; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Quantum dots; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634151
