Title :
Localized growth of InAs quantum dots (QDs) on nanopatterned InP(001) surfaces
Author :
Turala, A. ; Regreny, P. ; Rojo-Romeo, P. ; Priester, C. ; Gendry, M.
Author_Institution :
Laboratoire d´´Electronique, Optoelectronique et Microsystemes - LEOM, Ecole Centrale de Lyon, Ecully
Abstract :
This work is devoted lo the localization of InAs quantum dots (QDs) grown by solid-source molecular beam epitaxy on nanostructured InP(001) surfaces, which will find application in quantum or classical devices operating at the wavelength of 1.55 mum. The dots are grown on the mesas or in the holes, which are designed to be the sites of privileged nucleation of the quantum dots
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; nanopatterning; nucleation; semiconductor growth; semiconductor quantum dots; surface structure; 1.55 mum; InAs quantum dots; InAs-InP; InP; classical devices; localized growth; nanopatterned InP(001) surfaces; nucleation; quantum devices; solid-source molecular beam epitaxy; Indium phosphide; Lithography; Molecular beam epitaxial growth; Nanopatterning; Optical surface waves; Quantum computing; Quantum dots; Shape; Surface waves; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634152
