Localized growth of InAs quantum dots (QDs) on nanopatterned InP(001) surfaces

Author

Turala, A. ; Regreny, P. ; Rojo-Romeo, P. ; Priester, C. ; Gendry, M.

Author_Institution

Laboratoire d´´Electronique, Optoelectronique et Microsystemes - LEOM, Ecole Centrale de Lyon, Ecully

fYear

0

fDate

0-0 0

Firstpage

214

Lastpage

217

Abstract

This work is devoted lo the localization of InAs quantum dots (QDs) grown by solid-source molecular beam epitaxy on nanostructured InP(001) surfaces, which will find application in quantum or classical devices operating at the wavelength of 1.55 mum. The dots are grown on the mesas or in the holes, which are designed to be the sites of privileged nucleation of the quantum dots

Keywords

III-V semiconductors; indium compounds; molecular beam epitaxial growth; nanopatterning; nucleation; semiconductor growth; semiconductor quantum dots; surface structure; 1.55 mum; InAs quantum dots; InAs-InP; InP; classical devices; localized growth; nanopatterned InP(001) surfaces; nucleation; quantum devices; solid-source molecular beam epitaxy; Indium phosphide; Lithography; Molecular beam epitaxial growth; Nanopatterning; Optical surface waves; Quantum computing; Quantum dots; Shape; Surface waves; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634152

Filename

1634152