Title :
Ultra-narrow rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated by using orientation-dependent wet etching
Author :
Liu, Y.X. ; Ishii, K. ; Tsutsumi, T. ; Masahara, M. ; Takashima, H. ; Suzuki, E.
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
In this paper, we report the Fin-type double-gate MOSFET (FXMOSFET) with an ideal rectangular cross section Si-Fin channel by using [110] oriented SOI wafers and orientation dependent wet etching.
Keywords :
MOSFET; elemental semiconductors; etching; silicon; silicon-on-insulator; Si; Si-Fin channel double-gate MOSFET; [110] oriented SOI wafers; orientation dependent wet etching; rectangular cross section; silicon on insulator; Doping; Fabrication; FinFETs; MOSFETs; Nanoelectronics; Oxidation; Shape; Textile industry; Voltage; Wet etching;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226857
