Author :
Park, T. ; Park, D. ; Chung, J.H. ; Yoon, E.J. ; Kim, S.M. ; Cho, H.J. ; Choe, J.D. ; Choi, J.H. ; Yoon, B.M. ; Han, J.J. ; Kim, B.H. ; Choi, S. ; Kim, K. ; Yoon, E. ; Lee, J.H.
Abstract :
In this paper, we introduce PMOS body-tied FinFet characteristics. For this work, the 0.1/spl mu/m design ruled SRAM technology was used. I/sub D/-V/sub DS/ characteristics show that /spl Omega/ MOSFET apparently has lower DIBL characteristics than conventional PMOS transistor. On current of the /spl Omega/ MOSFET is higher than that of conventional device and can be improved by optimising unit processes.
Keywords :
MOSFET; SRAM chips; chemical mechanical polishing; elemental semiconductors; etching; silicon; silicon compounds; silicon-on-insulator; /spl Omega/ MOSFET; 0.1 micron; PMOS body-tied FinFET; SRAM technology; Si-SiO/sub 2/-SiN; SiN layer; chemical mechanical polishing; conventional PMOS transistor; drain induced barrier lowering; gate poly-Si etching; silicon on insulator; Etching; FinFETs; Ion implantation; MOSFET circuits; Oxidation; Random access memory; Resists; Scanning electron microscopy; Silicon compounds; Transmission electron microscopy;
