A Technology for Integrating Active Photonic Devices on SOI Wafers

Author

Bowers, John E. ; Park, Hyundai ; Fang, Alexander W. ; Jones, Richard ; Cohen, Oded ; Paniccia, Mario J.

Author_Institution

ECE Dept., California Univ., Santa Barbara, CA

fYear

0

fDate

0-0 0

Firstpage

218

Lastpage

221

Abstract

We present an integration technology for building active photonic devices on a silicon-on-insulator (SOI) based platform by using plasma assisted wafer bonding of III-V quantum wells to passive devices fabricated on SOI. Using this technique we have demonstrated an optically pumped silicon evanescent laser operating continuous wave (CW) up to 60degC. The lasers emit at 1.5 mum with a minimum threshold of ~25 mW and a maximum single-sided fiber-coupled CW output power at room temperature of 4.5 mW

Keywords

III-V semiconductors; integrated optics; optical pumping; passivation; semiconductor lasers; semiconductor quantum wells; silicon-on-insulator; wafer bonding; 1.5 mum; 4.5 mW; III-V quantum wells; SOI wafer; optical pumping; passivation; photonic device integration; plasma assisted wafer bonding; silicon evanescent laser; silicon-on-insulator; Fiber lasers; III-V semiconductor materials; Photonics; Plasma devices; Plasma waves; Pump lasers; Quantum well lasers; Silicon on insulator technology; Stimulated emission; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634153

Filename

1634153