Title :
Low defects and high quality Al/sub 2/O/sub 3/ Ge-on-insulator MOSFETs
Author :
Yu, D.S. ; Huang, C.H. ; Chin, A. ; Chen, W.J.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
High quality and dislocation free Al/sub 2/O/sub 3/ Ge-on-insulator (GOI) MOSFETs are fabricated and confirmed by TEM. At the comparable leakage current of 1.5/spl times/10/sup -3/ A/cm/sup 2/ at 1 V and same 1.7 nm EOT with Al/sub 2/O/sub 3//Si p-MOSFETs, the Al/sub 2/O/sub 3//GOI devices show 2.5 times and 1.3 times higher hole mobility than respective Al/sub 2/O/sub 3//Si control devices and SiO/sub 2//Si universal mobility at E/sub eff/ of 1 MV/cm.
Keywords :
MOSFET; alumina; elemental semiconductors; germanium; hole mobility; leakage currents; silicon; silicon compounds; transmission electron microscopy; 1 V; 1.7 nm; Al/sub 2/O/sub 3/ Ge-on-insulator MOSFETs; Al/sub 2/O/sub 3/-Ge; Al/sub 2O/-Si; SiO/sub 2/-Si; TEM; hole mobility; leakage current; universal mobility; Breakdown voltage; Capacitance-voltage characteristics; Dielectric breakdown; Etching; MOSFET circuits; Plasma applications; Plasma temperature; Wafer bonding;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226861
