Title :
Advances in 3D two-photon optical storage devices
Author :
Dvornikov, A.S. ; Cokgor, I. ; McCormick, F.B. ; Esener, S.E. ; Renzepis, P.M.
Author_Institution :
Call-Recall Inc., San Diego, CA, USA
Abstract :
The materials and method for storing and accessing information in 3D by means of two-photon absorption is described. The materials used have very high two photon absorption cross-section and near unit quantum efficiency for fluorescence. The storage devices are composed of organic molecules uniformly dispersed in polymer matrices. The binary codes zero and one correspond to two different structures of the same molecule induced by simultaneous absorption of two photons. Information writing and accessing can be performed either bit by bit or in a 2D multibit plane format. Fatigue studies suggest that these materials are suitable for 3D storage devices. Automated recording and readout 3D systems have been constructed and characterized. Channel error sources have been identified and a custom spatial bit-error-rate test has been developed
Keywords :
error analysis; fatigue; fluorescence; light absorption; optical polymers; optical storage; two-photon processes; 2D multibit plane format; 3D information storage materials; 3D storage devices; 3D two-photon optical storage devices; automated recording/readout 3D systems; binary codes; channel error sources; custom spatial bit-error-rate test; dispersed organic molecules; fatigue; fluorescence; information access; information storage; information writing; molecule structures; polymer matrices; quantum efficiency; simultaneous two-photon absorption; storage devices; two photon absorption cross-section; two-photon absorption; Absorption; Active matrix organic light emitting diodes; Binary codes; Fatigue; Fluorescence; Material storage; Optical devices; Optical materials; Optical polymers; Writing;
Conference_Titel :
Nonvolatile Memory Technology Conference, 1998. 1998 Proceedings. Seventh Biennial IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4518-5
DOI :
10.1109/NVMT.1998.723222