DocumentCode
1980071
Title
Recent developments in vertical Bloch line data storage
Author
Blaes, B.R. ; Katti, R.R. ; Lieneweg, U. ; Natale, M. ; Von Wachte, O. ; Wessling, E.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
1998
fDate
22-24 Jun 1998
Firstpage
72
Lastpage
76
Abstract
Data storage systems based on vertical Bloch lines have been fabricated in 2 μm bubble garnet material. The input/output line was fully operational, and experiments in reading and writing showed an encouraging correlation between input and output. Further effort is required to solidify these processes and to establish bit propagation around the storage domains
Keywords
Bloch line memories; garnets; magnetic bubble memories; magnetic bubbles; 2 micron; bit propagation; bubble garnet material; data reading; data storage systems; data writing; input/output line; storage domains; vertical Bloch line data storage; vertical Bloch lines; Clocks; Data storage systems; Garnets; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Magnetic materials; Magnetization; Memory; Perpendicular magnetic anisotropy;
fLanguage
English
Publisher
ieee
Conference_Titel
Nonvolatile Memory Technology Conference, 1998. 1998 Proceedings. Seventh Biennial IEEE
Conference_Location
Albuquerque, NM
Print_ISBN
0-7803-4518-5
Type
conf
DOI
10.1109/NVMT.1998.723223
Filename
723223
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