DocumentCode
1980081
Title
GaAs-based MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics grown by atomic layer deposition
Author
Ye, P.D. ; Wilk, G.D. ; Yang, B. ; Kwo, J. ; Gossmann, H.-J.L. ; Frei, M. ; Chu, S.N.G. ; Nakahara, S. ; Mannaerts, J.P. ; Sergent, M. ; Hong, M. ; Ng, K.K. ; Bude, J.
Author_Institution
Agere Syst., Murray Hill, NJ, USA
fYear
2003
fDate
23-25 June 2003
Firstpage
41
Lastpage
42
Abstract
In this paper, we demonstrate for the first time GaAs-based MOSFETs with excellent performance using of CVD is a very robust, highly manufacturable process.
Keywords
III-V semiconductors; MOSFET; alumina; dielectric devices; dielectric materials; gallium arsenide; leakage currents; Al/sub 2/O/sub 3/ gate dielectrics; Al/sub 2/O/sub 3/-GaAs; CVD; GaAs-based MOSFET; atomic layer deposition; Atomic layer deposition; Dielectric substrates; Gallium arsenide; MOSFETs; Radio frequency; Solid modeling; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2003
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-7727-3
Type
conf
DOI
10.1109/DRC.2003.1226862
Filename
1226862
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