Title :
Tunable Low-Field Interdigitated Barium Strontium Titanate Capacitors
Author :
Ahmad, Mahmoud Al ; Leclerc, G. ; Brunet, M. ; Mauran, N. ; Bary, L. ; Plana, R. ; Payan, S. ; Michau, D. ; Maglione, M.
Author_Institution :
LAAS, CNRS, Toulouse
Abstract :
The rapid growth of communication systems demand for wide tunable low loss microwave components. Barium strontium titanate (BST) voltage dependent permittivity has shown a great potential impact for the fabrication of frequency agile components. In this work, BST interdigital capacitor (IDC) on silicon substrate exhibiting high tunability at low bias voltages is presented. The interdigital capacitor with a 3 mum gap is characterized. The tunability of 3:1 is obtained at bias voltage of 5 V. This corresponds to a 3.5 mum electrode gap width and a 5 V dc bias. Microwave measurements reveal a zero bias film quality of 50 around 30 GHz.
Keywords :
barium compounds; circuit tuning; strontium compounds; thin film capacitors; titanium compounds; BST interdigital capacitor; barium strontium titanate capacitors; frequency agile components; low bias voltages; silicon substrate; voltage dependent permittivity; wide tunable low loss microwave components; Barium; Binary search trees; Capacitors; Fabrication; Frequency; Permittivity; Silicon; Strontium; Titanium compounds; Voltage; BST; capacitors; thin film; tunable circuit; varactors;
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
DOI :
10.1109/APMC.2007.4555006
