Tunable Low-Field Interdigitated Barium Strontium Titanate Capacitors

Author

Ahmad, Mahmoud Al ; Leclerc, G. ; Brunet, M. ; Mauran, N. ; Bary, L. ; Plana, R. ; Payan, S. ; Michau, D. ; Maglione, M.

Author_Institution

LAAS, CNRS, Toulouse

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

The rapid growth of communication systems demand for wide tunable low loss microwave components. Barium strontium titanate (BST) voltage dependent permittivity has shown a great potential impact for the fabrication of frequency agile components. In this work, BST interdigital capacitor (IDC) on silicon substrate exhibiting high tunability at low bias voltages is presented. The interdigital capacitor with a 3 mum gap is characterized. The tunability of 3:1 is obtained at bias voltage of 5 V. This corresponds to a 3.5 mum electrode gap width and a 5 V dc bias. Microwave measurements reveal a zero bias film quality of 50 around 30 GHz.

Keywords

barium compounds; circuit tuning; strontium compounds; thin film capacitors; titanium compounds; BST interdigital capacitor; barium strontium titanate capacitors; frequency agile components; low bias voltages; silicon substrate; voltage dependent permittivity; wide tunable low loss microwave components; Barium; Binary search trees; Capacitors; Fabrication; Frequency; Permittivity; Silicon; Strontium; Titanium compounds; Voltage; BST; capacitors; thin film; tunable circuit; varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4555006

Filename

4555006