Title :
SONNS memory: improvement over SONOS flash memory
Author :
Min She ; Takeuchi, H. ; Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
High-quality silicon-nitride (Si/sub 3/N/sub 4/) formed by rapid thermal nitridation is investigated as the tunnel dielectric in a SONOS-type memory device for the first time. Compared to a conventional SiO/sub 2/ tunnel dielectric, thermal Si/sub 3/N/sub 4/ provides 100X better retention after 1e5 P/E cycles and better endurance characteristics with lower programming voltages. Hence, the SONNS is promising for non-volatile memory applications.
Keywords :
flash memories; nitridation; random-access storage; silicon compounds; Si/sub 3/N/sub 4/; endurance; programming voltages; rapid thermal nitridation; silicon-oxide-nitride-oxide-silicon flash memory; thermal Si/sub 3/N/sub 4/; tunneling dielectrics; Charge carrier processes; Dielectric devices; Dielectric substrates; Flash memory; Leakage current; Nonvolatile memory; SONOS devices; Testing; Tunneling; Voltage;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226869
