• DocumentCode
    1980251
  • Title

    ICP Etching Process Development based on Cl2/H2 Chemistry and Adapted to Non-Thermalized InP Wafers for the Realization of High Aspect Ratio and Vertical Sidewall Deep Ridge Waveguides and Buried Heterostructures

  • Author

    Guilet, S. ; Bouchoule, S. ; Jany, C. ; Corr, C.S. ; Chabert, P.

  • Author_Institution
    Lab. de Photonique et de Nanostructures, CNRS, Marcoussis
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    262
  • Lastpage
    265
  • Abstract
    ICP etching using Cl2/H2 chemistry is studied to realize deep ridges with smooth and vertical sidewall. The influence of Cl2/H2 ratio on the etching mechanism is investigated for both InP bulk layers and InGa(Al)As/InP heterostructures. The process is optimised for non-thermalized InP wafers to avoid the use of thermal grease
  • Keywords
    III-V semiconductors; chlorine; etching; gallium arsenide; hydrogen; indium compounds; optical waveguides; ridge waveguides; semiconductor heterojunctions; Cl2-H2; Cl2/H2 chemistry; ICP etching; InGa(Al)As-InP; InGa(Al)As/InP heterostructures; buried heterostructures; nonthermalized InP wafers; vertical sidewall deep ridge waveguides; Aluminum; Electrodes; Etching; Hydrogen; Indium phosphide; Inductors; Plasma applications; Plasma chemistry; Plasma temperature; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    0-7803-9558-1
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2006.1634164
  • Filename
    1634164
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1980251