Quantum-Dot Intermixing Enhancement using UV Laser Irradiation

Author

Djie, Hery S. ; Wang, Dong-Ning ; Ooi, Boon S. ; Hwang, James C M

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA

fYear

0

fDate

0-0 0

Firstpage

266

Lastpage

269

Abstract

We report the development of an intermixing technique in InGaAs/GaAs quantum-dot (QD) structure using the combination effects of pulsed UV laser irradiation and dielectric induced layer intermixing. Using this method, the quantum-dot intermixing rate is greatly enhanced by group-III vacancies generated by the dielectric cap during annealing. A bandgap shift as large as 180 meV has been measured from a sample exposed to 480 mJ/cm², 150 pulses of 248 nm UV light, and annealed with a 200 nm thick SiO₂ encapsulant layer. Under similar annealing conditions, the non-irradiated SiO₂ and Si _xN_y encapsulated QDs only exhibit bandgap shifts of 18 meV and 91 meV, respectively

Keywords

III-V semiconductors; annealing; energy gap; gallium arsenide; indium compounds; laser beam effects; semiconductor quantum dots; ultraviolet radiation effects; 18 meV; 180 meV; 200 nm; 248 nm; 91 meV; InGaAs-GaAs; InGaAs/GaAs quantum-dot structure; UV laser irradiation; annealing; bandgap shift; dielectric cap; dielectric induced layer intermixing; group-III vacancies; quantum-dot intermixing; Annealing; Dielectrics; Gallium arsenide; Indium gallium arsenide; Optical pulses; Photonic band gap; Pulse measurements; Quantum dot lasers; Quantum dots; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634165

Filename

1634165