Nitrogen Implantation Induced Intermixing in InAs/InAlGaAs/InP Dots-in-Well Laser

Nitrogen implantation has been performed to promote the group-III intermixing in InAs quantum dots embedded in InAlGaAs quantum-well laser structure. A differential bandgap shift as large as 112 nm (65 meV) has been observed after nitrogen implantation at 5times10¹² ions/cm², 1500 keV and annealing at 700degC. The intermixing activation is found to occur at a lower temperature than the typical dielectric cap annealing induced intermixing technique. The implantation induced a vacancy peaks at 1.5 mum above the active region. The point defects diffuse efficiently through the active region during subsequent annealing and induced quantum-dot intermixing with improved luminescence at a relatively low activation annealing temperature