Title :
A High Linear Dual-Band PA Driver for GSM/CDMA/PHS Applications
Author :
Wu, Jie ; Li, Zhiqun ; Ye, Song
Author_Institution :
Southeast Univ., Nanjing
Abstract :
A 900 MHz/1.9 GHz dual-band power amplifier driver (PA driver) in a 0.35 mum SiGe technology is presented. The PA driver has been designed for GSM/CDMA/PHS in- building applications. Simulation results show 31 dB voltage gain and 10.6 dBm OP 1 dB while drawing 36 mA from a 3.3 V supply. The size of the chip is 1.4times0.882 mm2.
Keywords :
Ge-Si alloys; UHF power amplifiers; cellular radio; code division multiple access; driver circuits; personal communication networks; CDMA; GSM; PHS application; SiGe; SiGe technology; frequency 1.9 GHz; frequency 900 MHz; high linear dual-band PA driver; power amplifier; size 0.35 mum; Buildings; Driver circuits; Dual band; GSM; Gain; Germanium silicon alloys; Multiaccess communication; Power amplifiers; Silicon germanium; Voltage; PA driver; SiGe; differential to single-ended; linearity;
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
DOI :
10.1109/APMC.2007.4555013
