• DocumentCode
    1980276
  • Title

    A High Linear Dual-Band PA Driver for GSM/CDMA/PHS Applications

  • Author

    Wu, Jie ; Li, Zhiqun ; Ye, Song

  • Author_Institution
    Southeast Univ., Nanjing
  • fYear
    2007
  • fDate
    11-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A 900 MHz/1.9 GHz dual-band power amplifier driver (PA driver) in a 0.35 mum SiGe technology is presented. The PA driver has been designed for GSM/CDMA/PHS in- building applications. Simulation results show 31 dB voltage gain and 10.6 dBm OP 1 dB while drawing 36 mA from a 3.3 V supply. The size of the chip is 1.4times0.882 mm2.
  • Keywords
    Ge-Si alloys; UHF power amplifiers; cellular radio; code division multiple access; driver circuits; personal communication networks; CDMA; GSM; PHS application; SiGe; SiGe technology; frequency 1.9 GHz; frequency 900 MHz; high linear dual-band PA driver; power amplifier; size 0.35 mum; Buildings; Driver circuits; Dual band; GSM; Gain; Germanium silicon alloys; Multiaccess communication; Power amplifiers; Silicon germanium; Voltage; PA driver; SiGe; differential to single-ended; linearity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2007. APMC 2007. Asia-Pacific
  • Conference_Location
    Bangkok
  • Print_ISBN
    978-1-4244-0748-4
  • Electronic_ISBN
    978-1-4244-0749-1
  • Type

    conf

  • DOI
    10.1109/APMC.2007.4555013
  • Filename
    4555013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1980276