High power AlGaN/GaN HEMTs grown by plasma-assisted MBE operating at 2 to 25 GHz

Author

Waechtler, T. ; Manfra, Michael J. ; Weimann, N.G.

Author_Institution

Lucent Technol. Bell Labs., Murray Hill, NJ, USA

fYear

2003

fDate

23-25 June 2003

Firstpage

61

Lastpage

62

Abstract

In this paper, AlGaN/GaN heterostructures grown by plasma-assisted MBE on semi-insulating 6H-SiC. Optimization of MBE growth conditions now allows for the routine production of heterostructures with a room temperature mobility of 1400cm/sup 2//Vs at a sheet density of 1.1/spl times/10/sup 13/cm/sup -2/. We discuss heterostructure designs found to minimize RF dispersion. All power data reported is achieved without the use of a SiN surface passivation layer.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; plasma materials processing; power HEMT; semiconductor growth; wide band gap semiconductors; 2 to 25 GHz; 293 to 298 K; AlGaN-GaN; AlGaN/GaN heterostructures growth; plasma-assisted MBE growth; power AlGaN/GaN HEMT; room temperature mobility; sheet density; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Passivation; Plasma density; Plasma temperature; Production; Radio frequency; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2003

Conference_Location

Salt Lake City, UT, USA

Print_ISBN

0-7803-7727-3

Type

conf

DOI

10.1109/DRC.2003.1226872

Filename

1226872