Investigation of hetero-interfaces formed in InP/GaInAs/InP structures with different growth rates

Author

Ohtake, Y. ; Eguchi, T. ; Miyake, S. ; Lee, W.S. ; Tabuchi, M. ; Takeda, Y.

Author_Institution

Dept. of Mater. Sci. & Eng., Nagoya Univ.

fYear

0

fDate

0-0 0

Firstpage

290

Lastpage

293

Abstract

Compositional grading in InP/Ga_0.47In_0.53As/InP heterostructures was investigated by utilizing the X-ray crystal truncation rod (CTR) scattering measurement. The InP/Ga_0.47In_0.53As/InP structures were grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with various growth rates. The results showed that with decrease of the growth rate, the compositional grading increased at hetero-interfaces. The reason why the compositional grading was enhanced when the growth rate was low can be explained by exchange of atoms and/or roughening of the surface while the GaInAs layer was covered slowly at lower growth rates

Keywords

III-V semiconductors; MOCVD; X-ray scattering; chemical analysis; chemical interdiffusion; gallium arsenide; gallium compounds; indium compounds; interface structure; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; surface roughness; vapour phase epitaxial growth; GaInAs layer; InP-GaInAs-InP; InP/Ga_0.47In_0.53As/InP heterostructures; InP/GaInAs/InP structures; X-ray crystal truncation rod scattering; atomic exchange; compositional grading; growth rate; hetero-interfaces; low-pressure OMVPE; low-pressure organometallic vapor phase epitaxy; surface roughening; Atomic layer deposition; Atomic measurements; Epitaxial growth; Hydrogen; Indium phosphide; Inductors; Rough surfaces; Surface roughness; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634171

Filename

1634171