Accurate Experimental Noise Characterization of GaAs FET´s at 18 and 20 GHz through the use of the Noise Waves Model.

The noise temperature of FET´s at 18 and 20 GHz is experimentally determined as a function of the source reflection factor through the use of the recently developed noise waves model. The method appears to be able to provide unbiased results for FET´-chips without any input tuning. Removing the second stage contribution is possible under arbitrary load conditions (with or without output matching). It is based on accurate S parameters measurements that now can be achieved by means of computerized vector error correction. Computer implementation is readily achieved on advanced personal or desktop calculators.