DocumentCode
1980459
Title
Influence of surface structure on electrical characteristics in SiC MESFETs
Author
Ho-Young Cha ; Thomas, C.I. ; Eastman, L.F. ; Spencer, M.G.
Author_Institution
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear
2003
fDate
23-25 June 2003
Firstpage
77
Lastpage
78
Abstract
In this paper, the influence of surface structure on SiC MESFETs has been studied by investigating electrical characteristics, such as DC, small signal, and large signal characteristics. Three different structures have been fabricated and compared with each other:channel-recessed, gate-recessed, and buried gate structures.
Keywords
power MESFET; semiconductor epitaxial layers; silicon compounds; surface structure; wide band gap semiconductors; DC; SiC; SiC MESFETs; buried gate structures; channel-recessed structures; electrical properties; gate-recessed structures; large signal; small signal; surface structure; Electric variables; MESFETs; Passivation; Performance evaluation; Power generation; Power measurement; Radio frequency; Silicon carbide; Surface structures; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2003
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-7727-3
Type
conf
DOI
10.1109/DRC.2003.1226880
Filename
1226880
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