DocumentCode
1980470
Title
Ultrafast carrier relaxation dynamics in InN films
Author
Fukunaga, K. ; Hashimoto, M. ; Kunugita, H. ; Kamimura, J. ; Kikuchi, A. ; Kishino, K. ; Ema, K.
Author_Institution
Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo, Japan
fYear
2009
fDate
30-3 Aug. 2009
Firstpage
1
Lastpage
2
Abstract
Ultrafast and slow photo-carrier dynamics in InN films were investigated using femtosecond transient measurements. We found the slow component disappears under the optimized condition due to the equilibrium of band filling and bandgap renormalization effects.
Keywords
carrier relaxation time; high-speed optical techniques; indium compounds; optical films; optical variables measurement; wide band gap semiconductors; band filling equilibrium; bandgap renormalization effects; femtosecond transient measurements; slow photo-carrier dynamics; ultrafast carrier relaxation dynamics; Charge carrier density; Density measurement; Electron mobility; Filling; Laser excitation; Optical modulation; Optical scattering; Photonic band gap; Temperature measurement; Ultrafast optics; InN; band filling; bandgap renormalization; carrier relaxation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-3829-7
Electronic_ISBN
978-1-4244-3830-3
Type
conf
DOI
10.1109/CLEOPR.2009.5292592
Filename
5292592
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