• DocumentCode
    1980477
  • Title

    Monolithic 4H-SiC Darlington transistors with a peak current gain of 2000

  • Author

    Yi Tang ; Chow, T.P.

  • Author_Institution
    Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2003
  • fDate
    23-25 June 2003
  • Firstpage
    79
  • Lastpage
    80
  • Abstract
    In this paper, we report an epi-base, implanted-emitter, monolithic Darlington transistor with high peak current gain of 2000.
  • Keywords
    bipolar transistors; silicon compounds; wide band gap semiconductors; 2000 dB; SiC; epi-base; implanted-emitter; monolithic 4H-SiC Darlington transistors; peak current gain; Annealing; Current density; Doping; Gain measurement; Joining processes; Power semiconductor devices; Silicon carbide; Temperature; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2003
  • Conference_Location
    Salt Lake City, UT, USA
  • Print_ISBN
    0-7803-7727-3
  • Type

    conf

  • DOI
    10.1109/DRC.2003.1226881
  • Filename
    1226881
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1980477