Title :
Monolithic 4H-SiC Darlington transistors with a peak current gain of 2000
Author :
Yi Tang ; Chow, T.P.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
In this paper, we report an epi-base, implanted-emitter, monolithic Darlington transistor with high peak current gain of 2000.
Keywords :
bipolar transistors; silicon compounds; wide band gap semiconductors; 2000 dB; SiC; epi-base; implanted-emitter; monolithic 4H-SiC Darlington transistors; peak current gain; Annealing; Current density; Doping; Gain measurement; Joining processes; Power semiconductor devices; Silicon carbide; Temperature; Transistors; Voltage;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226881
