Spinodal decomposition in the GaSbxNyAs1−x−y alloys

Author

Albarran, Salvador F D ; Noguez, Alicia G G ; Elyukhin, Vyacheslav A. ; Peralta, Patricia R.

Author_Institution

Dept. of Eng. in Comput., ESIME-IPN, Mexico City

fYear

2008

fDate

12-14 Nov. 2008

Firstpage

481

Lastpage

484

Abstract

Spinodal decomposition of the GaSb_xN_yAs_1-x-y quaternary alloys lattice-matched to the GaAs as the result of the internal deformation and coherency strain energies is described. The alloys are represented as quasiternary regular solutions. The internal deformation energy is presented by the interaction parameters between the constituent compounds estimated within the framework of the valence force field model. Ranges of spinodal decomposition of the GaSb_xN_yAs_1-x-y alloys up to yles0.035 with and without coherency strain energy are demonstrated.

Keywords

III-V semiconductors; antimony alloys; arsenic alloys; crystal structure; deformation; gallium alloys; internal stresses; lattice constants; segregation; spinodal decomposition; substrates; GaAs; GaAs substrate; GaSb_xN_yAs_1-x-y; coherency strain energy; interaction parameters; internal deformation energy; lattice matching; quasiternary regular solutions; quaternary alloys; spinodal decomposition; valence force field model; Atomic layer deposition; Automatic control; Capacitive sensors; Deformable models; Gallium arsenide; III-V semiconductor materials; Lattices; Nitrogen; Photonic band gap; Strain control; III–V quaternary alloys; Spinodal decomposition range;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering, Computing Science and Automatic Control, 2008. CCE 2008. 5th International Conference on

Conference_Location

Mexico City

Print_ISBN

978-1-4244-2498-6

Electronic_ISBN

978-1-4244-2499-3

Type

conf

DOI

10.1109/ICEEE.2008.4723368

Filename

4723368