MBE growth and characterization of highly tensile-strained InGaAs/InGaAlAs multi-quantum well for 1.3 /spl mu/m laser diodes

Author

Kim, J.M. ; Park, C.Y. ; Nam, S.Y. ; Lee, Y.T.

Author_Institution

Dept. of Information & Commun., Gwangju Inst. of Sci. & Technol.

fYear

0

fDate

0-0 0

Firstpage

300

Lastpage

302

Abstract

Highly tensile-strained InGaAs/InGaAlAs MQW was grown by MBE using the digital-alloy technique. Two peaks corresponding to electron-light hole transition (E1-LH1) and electron-heavy hole transition (E1-HH1) were clearly observed in the PL spectrum of MQW structure

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; stress effects; 1.3 mum; E1-HH1 transition; E1-LH1 transition; InGaAs-InGaAlAs; MBE growth; digital-alloy technique; electron-heavy hole transition; electron-light hole transition; highly tensile-strained InGaAs/InGaAlAs multi-quantum well; laser diodes; photoluminescence; Conducting materials; Diode lasers; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Quantum well devices; Temperature; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634174

Filename

1634174