Title :
MBE growth and characteristics of self-assembled InAs/InGaAs/GaAs quantum dots
Author :
Park, C.Y. ; Kim, J.M. ; Lee, Y.T.
Author_Institution :
Dept. of Information & Commun., Gwangju Inst. of Sci. & Technol.
Abstract :
Self-assembled InAs QDs was grown on (001) GaAs substrate by MBE. The dot density was 5.2times1010/cm2, the height was 14 nm and the width was 30 nm. The peak-wave length and the FWHM were 1266 nm and 41.23 meV respectively
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; self-assembly; semiconductor growth; semiconductor quantum dots; spectral line breadth; (001) GaAs substrate; 1266 nm; 14 nm; 30 nm; FWHM; InAs-InGaAs-GaAs; MBE; MBE growth; dot density; peak-wave length; photoluminescence; self-assembled InAs/InGaAs/GaAs quantum dots; Atomic force microscopy; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Quantum dots; Scanning electron microscopy; Substrates; Temperature; Transmission electron microscopy; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634175
