Title :
Sb-based heterostructure backward diodes with improved sensitivity
Author :
Meyers, R.G. ; Fay, P. ; Schulman, J.N. ; Thomas, S., III ; Chow, D.H. ; Boegeman, Y.K. ; Deelman, P.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Abstract :
In this paper, a promising alternative to these devices is the heterostructure backward diode based on the InAs/AlSb/GaSb material system. We have achieved record measured sensitivities through W-band, with an average zero-bias sensitivity of 3513 V/W and a biased sensitivity of 8124 V/W over the range of 1 to 70 GHz when driven from a 50 /spl Omega/ source. The 3 dB bandwidth has been measured to be greater than 110 GHz; a projected bandwidth of 143 GHz has been determined based on an equivalent circuit derived from measured s-parameters.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; gallium compounds; indium compounds; semiconductor diodes; 1 to 70 GHz; 110 GHz; 143 GHz; 50 ohm; InAs-AlSb-GaSb; InAs/AlSb/GaSb material system; Sb-based heterostructure backward diodes; equivalent circuit; s-parameters; zero-bias sensitivity; Anodes; Bandwidth; Detectors; Frequency; Laboratories; Millimeter wave circuits; Radiometers; Scattering parameters; Schottky diodes; Sensor arrays;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226888
