Title :
Non-Abrupt Junctions InP DHBT Power Amplifier in Class-AB CDMA Operation
Author :
Sawada, Ken ; Uemura, Masaya ; Koizumi, Emiko ; Hase, Ichiro ; Wada, Shinichi
Author_Institution :
Sony Corp., Kanagawa
Abstract :
InGaAs/InP double heterojunction bipolar transistors (DHBTs) with non-abrupt junctions have been utilized to achieve a high efficiency class-AB CDMA power amplifier (PA). InGaAs/InAlAs superlattice layers are inserted at the emitter-base junction and the base-collector junction to remove abrupt barriers in the conduction band. These non-abrupt junctions provide a low knee voltage in collector current-voltage characteristics, enabling a high efficiency, low distortion operation. We fabricated a large emitter-periphery device of 320 mum2 and obtained a 16.0 dBm output power with 54% PAE, at a -41 dBc adjacent channel leakage power ratio (ACLR) and a supply voltage of 3.5 V in a 900 MHz WCDMA class-AB operation. The total collector current consumed is 21 mA. Using InP-related materials, we will realize PA modules with low supply voltages for future mobile communication systems
Keywords :
III-V semiconductors; aluminium compounds; code division multiple access; gallium arsenide; heterojunction bipolar transistors; indium compounds; mobile communication; power amplifiers; power bipolar transistors; semiconductor superlattices; 21 mA; 3.5 V; 900 MHz; InGaAs-InAlAs; InGaAs-InP; InGaAs/InAlAs superlattice; InGaAs/InP double heterojunction bipolar transistors; WCDMA; adjacent channel leakage power ratio; class-AB CDMA power amplifier; conduction band; Double heterojunction bipolar transistors; High power amplifiers; Indium compounds; Indium gallium arsenide; Indium phosphide; Low voltage; Multiaccess communication; Operational amplifiers; Power amplifiers; Superlattices;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634179
