Towards minimizing read time for NAND flash

On NAND flash, a primary source of increased read time comes from the fact that in the presence of noise, the flash medium must be read several times using different read threshold voltages to find the optimal read location, which minimizes bit-error-rate. This paper proposes an algorithm to estimate the optimal read threshold in a fast manner using a limited number of re-reads. Then it derives an expression for the resulting BER in terms of the minimum possible BER. It is also shown that minimizing BER and minimizing codeword-error-rate are competing objectives in the presence of a limited number of allowed re-reads, and a tradeoff between the two is proposed.