Title :
RF passive devices on Si substrates with close to ideal EM performance
Author :
Chan, K.T. ; Chin, C. ; Li, Ming-Fu ; Kwong, D.L. ; McAlister, S.P. ; Duh, D.S. ; Lin, W.J.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
RF passive devices, such as transmission lines, inductors, antennas and band-pass filters, fabricated on Si substrates, show performance close to that obtained by E-M simulations, from 1 to 110 GHz. This was achieved using an optimized /spl sim/4 MeV proton implantation process performed after device fabrication to avoid contamination and can be masked by photoresist.
Keywords :
antennas; band-pass filters; inductors; masks; passive filters; photoresists; power transmission lines; radiofrequency filters; semiconductor device models; 1 to 110 GHz; EM simulations; RF passive devices; Si; Si substrates; antennas; band-pass filters; inductors; photoresist; proton implantation; transmission lines; Antenna measurements; Band pass filters; Contamination; Inductors; Pollution measurement; Power transmission lines; Propagation losses; Protons; Radio frequency; Resonance;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226889
