Title :
Novel Schottky Drain Medium Power GaAs MESFET
Author :
Meignant, Didier
Author_Institution :
Laboratoires d´´Electronique et de Physique Appliquée 3, avenue Descartes, 94450 Limeil-Brévannes, FRANCE
Abstract :
This paper describes a new method used to fabricate a submicronic recessed gate GaAs FET with Schottky drain. Preliminary DC and microwave results are presented together with the advantages of the Schottky drain.
Keywords :
Dry etching; Fabrication; Gallium arsenide; MESFETs; Metallization; Microwave FETs; Microwave devices; Microwave transistors; Power generation; Voltage;
Conference_Titel :
Microwave Conference, 1981. 11th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1981.332966
