• DocumentCode
    1980769
  • Title

    Photoelectric properties and their dopant concentration dependence in SrTiO3 /Nb: SrTiO3 heterojunctions

  • Author

    Ni, Mucui ; Lu, Jun ; Li, Shouchun ; Zhang, Jing ; Chen, Yafu

  • fYear
    2009
  • fDate
    30-3 Aug. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The photoelectric properties and their dependences on Nb dopant concentration of SrTiO3/Nb: SrTiO3 heterojunctions were investigated. The charge transferring and impurity levels at the interface of the heterostructures could account for the results.
  • Keywords
    charge exchange; doping profiles; impurity distribution; niobium; photoelectricity; strontium compounds; SrTiO3-SrTiO3:Nb; charge transfer; dopant concentration; impurity levels; photoelectric property; Electrons; Heterojunctions; Impurities; Lighting; Magnetic properties; Niobium; Optical pulses; Pulsed laser deposition; Substrates; Temperature; Pulsed laser deposition; heterojunction; photoelectric properties;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-3829-7
  • Electronic_ISBN
    978-1-4244-3830-3
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2009.5292604
  • Filename
    5292604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1980769