DocumentCode
1980847
Title
Terahertz technology: where transistors (so far) fear to tread
Author
Crowe, T.W.
Author_Institution
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
fYear
2003
fDate
23-25 June 2003
Firstpage
119
Lastpage
120
Abstract
In this paper, the development of integrated diode circuits manufactured by a GaAs-on-quartz integration process has been studied. GaAs material is a pair of micron-thickness that support the ohmic contacts and Schottky diodes in the center of each circuit.
Keywords
III-V semiconductors; Schottky diodes; gallium arsenide; microwave transistors; monolithic integrated circuits; ohmic contacts; 440 to 660 GHz; GaAs-SiO/sub 2/; GaAs-quartz integration; Schottky diodes; integrated diode circuits; ohmic contacts; transistors; Circuits; Diodes; Electrons; Frequency conversion; Gallium arsenide; Nonlinear optics; Optical filters; Optical waveguides; Probes; Submillimeter wave technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2003
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-7727-3
Type
conf
DOI
10.1109/DRC.2003.1226899
Filename
1226899
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