Title :
Terahertz technology: where transistors (so far) fear to tread
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
Abstract :
In this paper, the development of integrated diode circuits manufactured by a GaAs-on-quartz integration process has been studied. GaAs material is a pair of micron-thickness that support the ohmic contacts and Schottky diodes in the center of each circuit.
Keywords :
III-V semiconductors; Schottky diodes; gallium arsenide; microwave transistors; monolithic integrated circuits; ohmic contacts; 440 to 660 GHz; GaAs-SiO/sub 2/; GaAs-quartz integration; Schottky diodes; integrated diode circuits; ohmic contacts; transistors; Circuits; Diodes; Electrons; Frequency conversion; Gallium arsenide; Nonlinear optics; Optical filters; Optical waveguides; Probes; Submillimeter wave technology;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226899
