Intersubband transitions in novel strained coupled quantum wells based on In/sub 0.53/Ga/sub 0.47/As grown by molecular beam epitaxy

Author

Nagase, M. ; Mozume, T. ; Simoyama, T. ; Hasama, T. ; Ishikawa, H.

Author_Institution

Ultrafast Photonic Devices Lab., National Inst. of Adv. Industrial Sci. & Technol., Tsukuba

fYear

0

fDate

0-0 0

Firstpage

364

Lastpage

366

Abstract

InGaAs/AlAs/AlAsSb coupled double quantum wells (CDQWs) have been improved for use in intersubband transition switches. The In content of the well layers was reduced in order to investigate the two-photon absorption in our switches. The crystal quality for In content of 0.53 was deteriorated when compared with the case for In composition of 0.8 due to uncompensated strain by AlAs layers. A new strain-compensation for InGaAs/AlAs/AlAsSb CDQWs was achieved by adjusting the Sb composition of the barrier layers

Keywords

III-V semiconductors; aluminium compounds; band structure; chemical analysis; gallium arsenide; indium compounds; internal stresses; molecular beam epitaxial growth; optical switches; semiconductor growth; semiconductor quantum wells; two-photon spectra; AlAs layers; InGaAs-AlAs-AlAsSb; InGaAs/AlAs/AlAsSb coupled double quantum wells; Sb composition; barrier layers; crystal quality; intersubband transition; molecular beam epitaxy; strain-compensation; strained coupled quantum wells; two-photon absorption; Absorption; Capacitive sensors; Indium gallium arsenide; Indium phosphide; Laboratories; Molecular beam epitaxial growth; Optical coupling; Quantum cascade lasers; Substrates; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634191

Filename

1634191