DocumentCode :
1980892
Title :
Ultra-High-Mobility Gallium Arsenide OMVPE-Prepared from Trimethylgallium and Arsine
Author :
Martinsen, J. ; Wolford, D.J. ; Tsang, C.F. ; Bradley, J.A.
Author_Institution :
IBM Research Division, T.J. Watson Research Center, New York
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
216
Lastpage :
217
Keywords :
Chemicals; Gallium arsenide; Geometry; III-V semiconductor materials; Large-scale systems; Optoelectronic devices; Photoluminescence; Semiconductor materials; Telephony; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665024
Filename :
665024
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1980892
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