SiGe single-hole transistor fabricated by AFM oxidation and epitaxial regrowth

Author

Xiang-Zheng Bo ; Rokhinson, L.P. ; Tsui, D.C. ; Sturm, J.C.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

fYear

2003

fDate

23-25 June 2003

Firstpage

129

Lastpage

130

Abstract

In this paper, we report a new method for the fabrication of Si-based quantum dot devices with an all low-energy patterning process based on AFM lithography (to avoid defects from e-beam and RIE) and Si/SiGe heterojunctions with epitaxial regrowth to confine holes in three-dimensions. A single-hole transistor, which is the first reported SiGe quantum device with heterojunction passivation/carrier confinement, shows remarkably clean Coulomb blockade oscillations.

Keywords

Coulomb blockade; Ge-Si alloys; atomic force microscopy; elemental semiconductors; lithography; oxidation; passivation; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; silicon; thin film transistors; AFM lithography; AFM oxidation; Coulomb blockade oscillations; Si-SiGe; Si-SiGe heterojunctions; Si-based quantum dot devices; SiGe single hole transistor; epitaxial regrowth; heterojunction passivation-carrier confinement; holes; Germanium silicon alloys; Heterojunctions; Oxidation; Physics; Quantum computing; Quantum dots; Silicon germanium; Single electron devices; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2003

Conference_Location

Salt Lake City, UT, USA

Print_ISBN

0-7803-7727-3

Type

conf

DOI

10.1109/DRC.2003.1226902

Filename

1226902