DocumentCode :
1981030
Title :
Enhanced p-MOSFET performance by channel field redistribution
Author :
Fjeldly, Tor A. ; Ballangrud, Lars
Author_Institution :
Dept. of Phys. Electron., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
fYear :
1998
fDate :
2-4 Mar 1998
Firstpage :
46
Lastpage :
50
Abstract :
We discuss how the performance of p-channel MOSFETs can be improved by introducing a variable threshold voltage along the conducting channel. The threshold voltage variation is designed to increase the charge carrier concentration near the drain, thereby increasing the saturation voltage and the saturation current, and improving the device speed. The effect was demonstrated experimentally by subjecting p-MOSFETs to high-bias stress, which creates a step-variation in the threshold voltage near drain. We also developed device models for p-MOSFETs with linearly variable threshold, and predict that more than 40% speed gain may be achieved in some cases
Keywords :
MOSFET; carrier density; semiconductor device measurement; semiconductor device models; voltage distribution; channel field redistribution; charge carrier concentration; conducting channel; device models; device speed; enhanced performance; high-bias stress; linearly variable threshold; p-MOSFET; saturation current; saturation voltage; speed gain; threshold voltage step variation; variable threshold voltage; Charge carrier processes; Electron mobility; FETs; HEMTs; MODFETs; MOSFET circuits; Physics computing; Stress; Systems engineering and theory; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on
Conference_Location :
Isla de Margarita
Print_ISBN :
0-7803-4434-0
Type :
conf
DOI :
10.1109/ICCDCS.1998.705803
Filename :
705803
Link To Document :
بازگشت