DocumentCode
1981076
Title
The indium phosphide bare substrate: its influence on the epitaxy layer quality
Author
Jacob, G. ; Mosel, F. ; Robert, P.O. ; Giraud, E.
Author_Institution
InPACT, Moutiers
fYear
0
fDate
0-0 0
Firstpage
399
Lastpage
404
Abstract
This paper reviews the correlation between the substrate specifications and the quality of the epi-layer (morphology, photoluminescence, electrical properties). We will determine the list of critical specifications (on opposite to other ones) in order to get good epi growth
Keywords
III-V semiconductors; electrical conductivity; epitaxial growth; indium compounds; photoluminescence; semiconductor epitaxial layers; substrates; surface morphology; InP; critical specifications; electrical properties; epi growth; epitaxial layer quality; indium phosphide bare substrate; morphology; photoluminescence; substrate specifications; Bars; Digital signal processing; Epitaxial growth; Epitaxial layers; Indium phosphide; Lithography; Morphology; Photoluminescence; Stress; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location
Princeton, NJ
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634200
Filename
1634200
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