Title :
Metamorphic 6.0 /spl Aring/ In/sub 0.86/Al/sub 0.14/As/In/sub 0.86/Ga/sub 0.14/As double heterojunction bipolar transistors
Author :
Monier, C. ; Cavus, A. ; Sandhu, R. ; Sawdai, D. ; Lange, M. ; Gambin, V. ; Block, T. ; Gutierrez-Aitken, A.
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA, USA
Abstract :
In this paper, electrical characteristics from MBE-grown metamorphic HBTs with indium composition will be presented. I-V measurements and leakage measurements can be carried out in this report.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; vapour deposited coatings; I-V measurement; In/sub 0.86/Al/sub 0.14/As-In/sub 0.86/Ga/sub 0.14/As; MBE growth; electrical properties; heterojunction bipolar transistors; leakage measurement; metamorphic HBT; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Photonic band gap; Semiconductor materials; Substrates; Surface morphology; Variable speed drives;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226910
