• DocumentCode
    1981178
  • Title

    AlSb/InAs/InAsP/AlSb composite-channel HFETs

  • Author

    Lin, H.-K. ; Kadow, C. ; Dahlstrom, M. ; Bae, J.-U. ; Rodwell, M. ; Gossard, A.C. ; Brar, B. ; Sullivan, G. ; Nagy, G. ; Bergman, J.

  • Author_Institution
    Dept. of Mater., Univ. of California, Santa Barbara, CA, USA
  • fYear
    2003
  • fDate
    23-25 June 2003
  • Firstpage
    151
  • Lastpage
    152
  • Abstract
    In this paper, we report the first demonstration of HFETs with InAs/InAsP composite channels alleviating breakdown phenomena and improving the device performance in comparison to single-channel AlSb/InAs/AlSb HFETs.
  • Keywords
    III-V semiconductors; aluminium compounds; field effect transistors; indium compounds; semiconductor device breakdown; AlSb-InAs-InAsP-AlSb; AlSb/InAs/InAsP/AlSb composite-channel HFET; composite channels alleviating breakdown; single-channel AlSb/InAs/AlSb HFET; Circuits; Cutoff frequency; Degradation; Electric breakdown; Electron devices; HEMTs; Impact ionization; Leakage current; MODFETs; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2003
  • Conference_Location
    Salt Lake City, UT, USA
  • Print_ISBN
    0-7803-7727-3
  • Type

    conf

  • DOI
    10.1109/DRC.2003.1226911
  • Filename
    1226911
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1981178