DocumentCode
1981191
Title
InGaAsP/InP MQW DBR Laser Diode Fabricated by Selective Area MOVPE and Mass Transport for Monolithic Integration
Author
Darja, Jesse ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution
Electron. Eng., Tokyo Univ.
fYear
0
fDate
0-0 0
Firstpage
424
Lastpage
425
Abstract
Wide-stripe MOVPE selective area growth and InAsP mass transport on V-grooves can be used to fabricate distributed Bragg reflector type laser in a single growth step. This method can be applied for monolithic integration of single mode laser diodes with passive/active components
Keywords
MOCVD; distributed Bragg reflector lasers; optical fabrication; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; DBR laser; InAsP; InAsP mass transport; MOVPE; distributed Bragg reflector laser; monolithic integration; single mode laser diodes; wide-stripe selective area growth; Diode lasers; Distributed Bragg reflectors; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Gratings; Indium phosphide; Monolithic integrated circuits; Photonic band gap; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location
Princeton, NJ
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634206
Filename
1634206
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