• DocumentCode
    1981273
  • Title

    Fabrication and Electrical Characterisation of n-InAs Single Nanowhisker Field-Effect Transistors

  • Author

    Do, Q.T. ; Regolin, I. ; Khorenko, V. ; Prost, W. ; Tegude, F.-J.

  • Author_Institution
    Solid State Electron. Dept., University Duisburg-Essen, Duisburg
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    436
  • Lastpage
    438
  • Abstract
    We fabricated and characterised an n-InAs nanowhisker field effect transistors. Nanowhiskers were grown by metal-organic vapour-phase epitaxy (MOVPE) using the vapour-liquid-solid (VLS) growth mode. The fabricated device exhibits a high normalized transconductance (gm /wg) of 895 mS/mm and electron mobility above 4800 cm 2/Vs
  • Keywords
    III-V semiconductors; MOCVD; electron mobility; field effect transistors; indium compounds; nanotechnology; nanowires; semiconductor quantum wires; vapour phase epitaxial growth; InAs; MOVPE; electron mobility; metal-organic vapour-phase epitaxy; n-InAs single nanowhisker field-effect transistors; vapour-liquid-solid growth; Annealing; Contacts; Doping; Epitaxial growth; FETs; Fabrication; Gold; Intrusion detection; Nanoscale devices; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    0-7803-9558-1
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2006.1634210
  • Filename
    1634210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1981273