Title :
Carbon nanotube field-effect transistors-an example of an ultra-thin body Schottky barrier device
Author :
Appenzeller, J. ; Knoch, J. ; Avouris, P.
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We present experimental and simulation results on carbon nanotube field-effect transistors (CNFETs) and discuss their performance in the context of Schottky barriers in a strongly confined geometry. We focus in particular on the impact of the body thickness-the tube diameter-and explain why conventional output characteristics can be obtained in case of CNFETs.
Keywords :
Schottky barriers; carbon nanotubes; field effect transistors; nanotube devices; C; Schottky barrier device; carbon nanotube FET; carbon nanotube field-effect transistors; CNTFETs; Carbon nanotubes; Electric variables; Geometry; Hafnium oxide; MOSFETs; Schottky barriers; Semiconductivity; Silicon; Solid modeling;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226919
