Title :
Fabrication and I-V characterization of carbon nanotube single electron transistor operated at room temperature
Author :
Kamimura, T. ; Sakamoto, K. ; Maeda, M. ; Kurachi, K. ; Matsumoto, K.
Author_Institution :
Tsukuba Univ., Ibaraki, Japan
Abstract :
In this paper, it discussed about the fabrication of carbon nanotube single electron transistor. The electrical properties of position controlled grown carbon nanotube (CNT) with defects formed by the chemical process were examined, which showed the room temperature single electron transistor characteristics.
Keywords :
carbon nanotubes; chemical vapour deposition; electric current; electric potential; photolithography; single electron transistors; 293 to 298 K; C; CNT; I-V characterization; chemical process; electrical properties; position controlled grown carbon nanotube; room temperature; single electron transistor; Carbon nanotubes; Chemical processes; Fabrication; Photonic band gap; Quantum dots; Single electron transistors; Temperature control; Temperature dependence; Temperature measurement; Voltage;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226922
