DocumentCode
1981390
Title
Fabrication and I-V characterization of carbon nanotube single electron transistor operated at room temperature
Author
Kamimura, T. ; Sakamoto, K. ; Maeda, M. ; Kurachi, K. ; Matsumoto, K.
Author_Institution
Tsukuba Univ., Ibaraki, Japan
fYear
2003
fDate
23-25 June 2003
Firstpage
177
Lastpage
178
Abstract
In this paper, it discussed about the fabrication of carbon nanotube single electron transistor. The electrical properties of position controlled grown carbon nanotube (CNT) with defects formed by the chemical process were examined, which showed the room temperature single electron transistor characteristics.
Keywords
carbon nanotubes; chemical vapour deposition; electric current; electric potential; photolithography; single electron transistors; 293 to 298 K; C; CNT; I-V characterization; chemical process; electrical properties; position controlled grown carbon nanotube; room temperature; single electron transistor; Carbon nanotubes; Chemical processes; Fabrication; Photonic band gap; Quantum dots; Single electron transistors; Temperature control; Temperature dependence; Temperature measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2003
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-7727-3
Type
conf
DOI
10.1109/DRC.2003.1226922
Filename
1226922
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