DocumentCode
1981551
Title
Reproducible High Power Efficient TRAPATT Oscillators for S-Band
Author
Summers, J.G. ; Tubridy, G. ; Pierrepont, M. ; Jones, S. ; Waller, M.
Author_Institution
Philips Research Laboratories, Redhill, Surrey, England.
fYear
1981
fDate
7-11 Sept. 1981
Firstpage
486
Lastpage
491
Abstract
New TRAPATT devices and circuits have been evolved for miniature solid-state transmitter applications. The devices, which are made by a low cost, high yield silicon planar technology process, are extremely rugged and generate high powers and efficiencies reproducibly. Peak output powers of 340 W have been achieved in conjunction with a DC to RF conversion efficiency of 35% from single diodes. At a 2% duty cycle the mean output power obtained with a 100 ns pulse length is 5.3 W at an efficiency of 32% at about 2.5 GHz.
Keywords
Costs; Heat sinks; Light emitting diodes; Microwave oscillators; Power generation; Radio frequency; Silicon; Solid state circuits; Thermal resistance; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1981. 11th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1981.332994
Filename
4131660
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