Ultrafast coherent response of semiconductor quantum wells for multisubband excitation

Author

Arlt, S. ; Siegner, U. ; Morier-Genoud, F. ; Keller, U.

Author_Institution

Inst. for Quantum Electron., Fed. Inst. of Technol., Zurich, Switzerland

fYear

1998

fDate

8-8 May 1998

Firstpage

224

Lastpage

225

Abstract

Summary form only given.We study the coherent emission from transitions corresponding to different pairs of electron (e) and heavy (hh) or light (Ih) hole subbands in a 500-A wide GaAs-Al/sub 0.3/Ga/sub 0.7/As quantum well by spectrally resolved transient four wave mixing (FWM). The low-temperature linear absorption spectrum shows exciton transitions between electron and hole subbands with the same quantum number as well as exciton transitions.

Keywords

III-V semiconductors; aluminium compounds; excitons; gallium arsenide; high-speed optical techniques; light coherence; multiwave mixing; semiconductor quantum wells; time resolved spectroscopy; 500 A; GaAs-Al/sub 0.3/Ga/sub 0.7/As; GaAs-Al/sub 0.3/Ga/sub 0.7/As quantum well; coherent emission; electron pairs; exciton transitions; heavy hole subbands; hole subbands; light hole subbands; low-temperature linear absorption spectrum; multisubband excitation; quantum number; semiconductor quantum wells; spectrally resolved transient four wave mixing; ultrafast coherent response; Absorption; Delay effects; Excitons; Gallium arsenide; Interference; Optical pulses; Pulse modulation; Resonance; Scanning probe microscopy; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680471

Filename

680471