Disorder-induced interference in exciton decay dynamics

Author

Gang Chen ; Schaefer, Anna ; Gammon, D. ; Steel, David

Author_Institution

Michigan Univ., Ann Arbor, MI, USA

fYear

1998

fDate

8-8 May 1998

Firstpage

225

Lastpage

226

Abstract

Summary form only given.Coherent nonlinear spectroscopy is particularly well suited to the study of relaxation in these systems because of the well understood spectroscopic footprints that are associated with specific interactions and systems. Experiments are performed on a narrow (42 /spl Aring/) single MBE grown GaAs quantum well with 250-/spl Aring/ Al/sub 0.3/Ga/sub 0.7/As barriers. Based on photoluminescence (PL) and phased-locked epitaxy (PLE) measurements, excitons in this system are localized in potentials corresponding to average monolayer thickness of either 15 or 16 monolayers.

Keywords

aluminium compounds; excitons; gallium arsenide; light interference; molecular beam epitaxial growth; monolayers; optical multilayers; photoluminescence; semiconductor growth; semiconductor quantum wells; 250 A; 4 A; Al/sub 0.3/Ga/sub 0.7/As; Al/sub 0.3/Ga/sub 0.7/As barriers; GaAs; GaAs quantum well; average monolayer thickness; coherent nonlinear spectroscopy; disorder-induced interference; exciton decay dynamics; monolayers; phased-locked epitaxy measurements; photoluminescence; single MBE grown; spectroscopic footprints; Displays; Excitons; Gallium arsenide; Interference; Light scattering; Luminescence; Particle scattering; Polarization; Rayleigh scattering; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680474

Filename

680474