• DocumentCode
    1981756
  • Title

    A complete deep-submicron C∞-continuous MOSFET model for circuit simulation

  • Author

    Iniguez, Benjamin ; Moreno, Eugenio Garcia

  • Author_Institution
    Univ. of the Balearic Islands, Palma de Mallorca, Spain
  • fYear
    1998
  • fDate
    2-4 Mar 1998
  • Firstpage
    59
  • Lastpage
    64
  • Abstract
    In this work we present an improved and complete deep-submicron MOSFET model for circuit simulation. This model includes expressions with an infinite order of continuity for channel current and all large and small-signal parameters, and therefore shows smooth transitions between the different operating regimes. The model is an improvement over our previous MOSFET model in order to include several effects that become important in submicron transistors. The agreement with the experimental measurements is good in a wide range of channel lengths
  • Keywords
    MOSFET; circuit CAD; circuit simulation; integrated circuit modelling; inversion layers; semiconductor device models; surface potential; C∞-continuous MOSFET model; CAD application; channel current; charge model; circuit simulation; complete deep-submicron MOSFET model; infinite order of continuity; inversion layer; large-signal parameters; series resistance effect; small-signal parameters; smooth transitions; submicron transistors; surface potential; Analytical models; Circuit simulation; Degradation; Harmonic distortion; MOSFET circuits; Scattering; Solid modeling; Threshold voltage; Transconductance; Velocity control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on
  • Conference_Location
    Isla de Margarita
  • Print_ISBN
    0-7803-4434-0
  • Type

    conf

  • DOI
    10.1109/ICCDCS.1998.705806
  • Filename
    705806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1981756